Rapid Thermal Annealing (RTA) is a semiconductor manufacturing technique that allows for the quick heating of samples to high temperatures in order to perform brief processes on a timescale of a few minutes at most. High intensity lights (e.g., near-infrared light sources – Tungsten-halogen lamps) govern such rapid heating rates, which are measured by pyrometers and thermocouples. To avoid dislocations and sample breakage, cooling must be precisely controlled.
Rapid Thermal Annealing was originally developed for ion implant annealing, but its applications have expanded to include oxidation, silicide formation, chemical vapour deposition, and advanced applications such as modifying the crystallographic phase of elements, compounds, or alloys to improve properties, lattice interface, or stress relaxation. RTP is a versatile technology that allows rapid heating and cooling to process temperatures ranging from 200 to 1300°C, with ramp speeds typically ranging from 20 to 200°C/sec, and excellent gas ambient control, allowing the design of sophisticated multistage processes within a single processing recipe.
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