The thermal oxidation process takes place in a furnace tube, which is a hot-walled quartz reactor. In the reactor, an oxidising gas (oxygen) or steam (oxygen + hydrogen) is injected and heated to a high temperature, often 800° to 1200°C. Because of the high temperature, oxygen can permeate into the silicon substrate and react with it to generate silicon dioxide. These reactions are diffusion limited, and the rate of growth diminishes exponentially with time, limiting the practical thickness that can be developed.
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