Diffusion furnaces are utilised in applications that need high temperatures at a moderate vacuum for an extended period of time. Thermal oxide formation, doping, and dopant diffusion are all possibilities. These furnaces are often fairly big and can handle a large number of substrates. Thermal oxide development on silicon occurs at extremely high temperatures in the presence of an oxygen-containing gas flow. The oxides produced in this manner have excellent dielectric and morphological characteristics.
Wafers can also be doped in diffusion furnaces by exposing them to a flow of dopant atoms from a solid/liquid or gas source. Furthermore, dopant diffusion can be accomplished by heating wafers for the duration required to obtain the appropriate doping profile.
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