Atomic Layer Deposition (or ALD) is a cutting-edge deposition technology that enables for the accurate deposition of ultra-thin films as thin as a few nanometres. ALD not only provides great thickness control and homogeneity, but it can also cover 3D structures with a conformal coating for high-aspect-ratio structures.
A plasma-enhanced atomic layer deposition (PE-ALD) method allows for the atomic-scale control of thin films of diverse materials. ALD is a regulated chemical vapour deposition technology that deposits a film one atomic layer at a time using gas precursors. By incorporating a distant plasma into an ALD system, such as this PE-ALD, the deposition parameter space is expanded by allowing precursor molecules to be cracked in the plasma rather than depending exclusively on thermal energy from the heated substrate.
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