A versatile cryogenic micro-manipulated probe station used for non-destructive testing of devices on full and partial wafers up to 51 mm (2 in) in diameter. The system is a platform for measurement of electrical, electro-optical, parametric, high Z, DC, RF, and microwave properties of materials and test devices. The probe station does not require any liquid Nitrogen or liquid Helium for it operation. Temperature range capabilities from 4.5 Kelvin to 475 Kelvin.
The Model CRX-4K is a versatile cryogen-free micro-manipulated probe station used for non-destructive testing of devices on full and partial wafers up to 51 mm (2 in) in diameter. The CRX-4K is a platform for measurement of electrical, electro-optical, parametric, high Z, DC, RF, and microwave properties of materials and test devices. Nanoscale electronics, quantum wires and dots, and semiconductors are typical materials measured in a CRX-4K. A wide selection of probes, cables, sample holders, and options makes it possible to configure the CRX-4K to meet your specific measurement applications
Based on a Sumitomo 4 K base temperature CCR, the CRX-4K provides efficient temperature operation and control over a temperature range of 4.5 K to 350 K without the operating expense of liquid cryogens. An optional interchangeable high temperature sample stage provides a temperature range of 20 K to 500 K. Each cryogenic stage is equipped with a sensor and heater to provide fast thermal response and rapid warm up for sample exchange. Actively cooled shielding intercepts blackbody radiation before it reaches the sample, ensuring small thermal gradients. The probe station does not require any liquid Nitrogen or liquid Helium for it operation.
Features
- Closed cycle refrigerator provides high stability cryogen-free operation from 4.5 K to 350 K
- Optional temperature range from 20 K to 500 K
- Control stability to 10 mK
- Sample exchange cycle time of <3.5 h
- Low vibration design: <1 µm at sample stage (X, Y, and Z axes)
- Measurements from DC to 67 GHz
- Sample holders optimized for low noise, high frequency, or high impedance measurements
- Accommodates up to 51 mm (2 in) diameter wafers
- Configurable with up to six thermally anchored micro-manipulated probe arms
- Probe arms with 3-axis adjustments and ±5° theta planarization
- Cables, shields, and guards minimize electrical noise and thermal radiation losses
- Options and accessories for customization to specific research needs
Image: Coulomb Blockade Effects and Conduction Mechanism in Extremely Thin Poly Silicon Wires
