PECVD System
| ITEM | DESCRIPTION |
| Substrate Size | 2″(32pcs) Wafer per Tray |
| Source | PE Plasma Type |
| Source Power | RF 1kw, 13.56Mhz |
| Heating Chuck | Max. 400℃ |
| Thickness Uniformity | ≤±5% |
| ITEM | DESCRIPTION |
| Material | SiO2 |
| Deposition Rate | 35Å/sec |
| Substrate Temp | 250℃ |
| Power Supply | RF |
| ITEM | RESULT |
| Film Thickness |
1100Å
|
| Reflactive Index | 1.40~1.50@630nm |
| Thickness Uniformity | ≤±4.1% |
